EECS Faculty Candidate Seminar- Ahmedullah Aziz
Relentless downscaling of transistors (dictated by Moore’s law) has been the prime strategy to fuel the evolution of electronics for decades. Keeping up with this trend, we are heading closer to the atomic dimensions with each new technology generation. Consequently, quantum phenomena and fundamental physical limits have emerged as serious concerns in device/circuit design. The conventional CMOS-based electronics are transitioning to post-CMOS era, triggering an upsurge in the exploration for novel materials and devices. These emerging technologies come with many unforeseen characteristics that can either provide new opportunities or create additional challenges. It is equally challenging and exciting to explore new ideas to properly utilize the novel features of such exploratory materials/devices.
In this talk, I will introduce an interesting class of materials that exhibit electrically driven phase transitions from insulating to metallic state (and vice versa). This family of materials has garnered tremendous interest in academia and industry in recent years. I will present a few of my unique device/circuit ideas, realized using the selective resistance switching in such materials. The first topic will be on phase transition material augmented spintronic memory devices, which can enable variation tolerant, stable and high-density digital data storage. This technique uses the non-volatility of the magnetic tunnel junction, conjoint with the abrupt switching and high selectivity of phase transition materials to solve several prevailing problems in spin-based memories. I will discuss the transformative impact of this idea by showing its possible extensions for different versions of memory devices, arrays and even in peripheral circuit like sense amplifier. The next idea will illustrate a technique to harness the inherent hysteresis of unipolar phase transition materials for efficient rectification. I will describe an approach to couple the hysteresis and abrupt transitions in these unipolar materials to eradicate the problem with diode drops in conventional rectifiers. These ideas will exhibit the need for strong synergy and careful-co-design between devices and circuits, to facilitate next-generation electronics. Finally, I will describe my research visions and teaching philosophy.
Ahmedullah Aziz is a Ph.D. candidate in the Department of Electrical and Computer Engineering at Purdue University. He earned an MS degree in Electrical Engineering from Pennsylvania State University. Prior to that, he worked in ‘Tizen Lab’ of Samsung R&D Institute as a full-time Engineer, where he explored and prototyped innovative ideas for leading-edge electronics. He also worked as a Co-Op Engineer (Intern) in the Technology Research division of Global Foundries (Fab 8, NY). His research interests include mixed signal VLSI circuits, non-volatile memory and beyond CMOS device design. He explores device-circuit-system co-design techniques with an emphasis on emerging technologies like complex oxide electronics, ferroelectrics and spintronics. He published over 50 scientific articles (including journals, conference papers, patent and book chapters) in prestigious platforms. He received several awards and accolades for his research, including the Icon award from Samsung, best publication award from SRC-DARPA STARnet Center, best project award from CNSER and best presentation award in Asia CTC. In addition, he received several scholarships and recognition for academic excellence, including – Dean’s Award, Sunrise-Star Award and Chairman’s Award. He also received the J.B. Gold Medal and the National Education Board Scholarship for being among the top 0.1% of students in Bangladesh.
Friday, February 8 at 11:00am to 12:00pm
Min H. Kao Electrical Engineering and Computer Science, 435
1520 Middle Drive, Knoxville, TN 37996